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Z0103NN0,135 Просмотр технического описания (PDF) - NXP Semiconductors.

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Z0103NN0,135 4Q Triac NXP
NXP Semiconductors. NXP
Z0103NN0,135 Datasheet PDF : 15 Pages
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NXP Semiconductors
Z0103NN0
4Q Triac
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
IT(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; Tsp 105 °C; see Figure 3;
see Figure 1; see Figure 2
ITSM
non-repetitive peak on-state
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
current
see Figure 4; see Figure 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; sine-wave pulse
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs;
T2+ G+
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs;
T2+ G-
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs;
T2- G-
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs;
T2- G+
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Min Max Unit
-
800 V
-
1
A
-
12.5 A
-
13.8 A
-
0.78 A2s
-
50 A/µs
-
50 A/µs
-
50 A/µs
-
20 A/µs
-
1
A
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
8
IT(RMS)
(A)
6
4
2
003aac269
1.2
IT(RMS)
(A)
0.8
0.4
003aac270
0
10-2
10-1
1
10
surge duration (s)
0
-5 0
0
50
100
150
Ts p (°C)
Fig 1. RMS on-state current as a function of surge
duration; maximum values
Fig 2. RMS on-state current as a function of solder
point temperature; maximum values
Z0103NN0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 March 2011
© NXP B.V. 2011. All rights reserved.
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