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Z0103MN0135 View Datasheet(PDF) - NXP Semiconductors.

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Description
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Z0103MN0135
NXP
NXP Semiconductors. NXP
Z0103MN0135 Datasheet PDF : 15 Pages
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NXP Semiconductors
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
IT(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; Tsp 103 °C;
see Figure 3; see Figure 1; see Figure 2
ITSM
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
non-repetitive peak on-state
current
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 4; see Figure 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
tp = 10 ms; SIN
IT = 1 A; IG = 20 mA;
dIG/dt = 100 mA/µs; T2+ G+
IT = 1 A; IG = 20 mA;
dIG/dt = 100 mA/µs; T2+ G-
IT = 1 A; IG = 20 mA;
dIG/dt = 100 mA/µs; T2- G-
IT = 1 A; IG = 20 mA;
dIG/dt = 100 mA/µs; T2- G+
over any 20 ms period
8
IT(RMS)
(A)
6
4
2
003aac269
1.2
IT(RMS)
(A)
0.8
0.4
Z0103MN0
4Q Triac
Min Max Unit
-
600 V
-
1
A
-
12.5 A
-
13.8 A
-
0.78 A2s
-
50 A/µs
-
50 A/µs
-
50 A/µs
-
20 A/µs
-
1
A
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
003aac270
0
10-2
10-1
1
10
surge duration (s)
0
-50
0
50
100
150
Tsp (°C)
Fig 1. RMS on-state current as a function of surge
duration; maximum values
Fig 2. RMS on-state current as a function of solder
point temperature; maximum values
Z0103MN0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 January 2011
© NXP B.V. 2011. All rights reserved.
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