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Z0107NA Просмотр технического описания (PDF) - Philips Electronics

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Z0107NA Triacs Philips
Philips Electronics Philips
Z0107NA Datasheet PDF : 12 Pages
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Philips Semiconductors
Z0103/07/09 series
Triacs
3. Ordering information
3.1 Ordering options
Table 2: Ordering information
Part Number
Z0103MA
Z0103NA
Z0107MA
Z0107NA
Z0109MA
Z0109NA
Z0103MN
Z0103NN
Z0107MN
Z0107NN
Z0109MN
Z0109NN
Voltage (VDRM)
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
600 V
800 V
4. Limiting values
Gate Sensitivity (IGT)
3 mA
3 mA
5 mA
5 mA
10 mA
10 mA
3 mA
3 mA
5 mA
5 mA
10 mA
10 mA
Package
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT54B (TO-92)
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
25 °C Tj 125 °C
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
VRRM
repetitive peak reverse voltage
25 °C Tj 125 °C
Z0103/07/09MA; Z0103/07/09MN
Z0103/07/09NA; Z0103/07/09NN
ITSM
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge;
Figure 2 and Figure 3
t = 20 ms
t = 16.7 ms
IT(RMS)
I2t
RMS on-state current
SOT223
SOT54B (TO-92)
I2t for fusing
all conduction angles; Figure 4
Tsp = 90 °C
Tlead = 50 °C
t = 10 ms
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
ITM = 1.0 A; IG = 2 x IGT; dIG/dt = 100 mA/µs
tp = 20 µs
over any 20 ms period
Min Max Unit
-
600 V
-
800 V
-
600 V
-
800 V
-
8
A
-
8.5
A
-
1
A
-
1
A
-
0.35 A2s
-
20
A/µs
-
1.0
A
-
2.0
W
-
0.1
W
40 +150 °C
40 +125 °C
9397 750 10102
Product data
Rev. 02 — 12 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 12
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