SG5768F View Datasheet(PDF) - Microsemi Corporation
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SG5768F Datasheet PDF : 5 Pages
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DIODE ARRAY SERIES
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (VBR) ................................................... 60V
Output Current (IO), TC = 25°C
Continuous ................................................................ 500mA
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package:
Thermal Resistance-Junction to Case, θJC .................. 30°C/W
Thermal Resistance-Junction to Ambient, θJA .............. 80°C/W
F Package (10 Pin):
Thermal Resistance-Junction to Case, θJC .................. 80°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 145°C/W
F Package (14 Pin):
Thermal Resistance-Junction to Case, θJC .................. 80°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 140°C/W
Operating Junction Temperature
Hermetic (J, F Packages) ............................................ 150°C
Storage Temperature Range ............................ -65°C to 200°C
Note A.
Junction Temperature Calculation:
T
J
=
T
A
+
(P
D
x
θ
).
JA
Note B. The above numbers for θJC are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The θJA numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
RECOMMENDED OPERATING CONDITIONS (Note 3)
Operating Ambient Temperature Range
SG5768 .......................................................... -55°C to 150°C
SG5770 .......................................................... -55°C to 150°C
SG5772 .......................................................... -55°C to 150°C
Note 3. Range over which the device is functional.
Operating Ambient Temperature Range
SG5774 .......................................................... -55°C to 150°C
SG6506 .......................................................... -55°C to 150°C
SG6507 .......................................................... -55°C to 150°C
SG6508 .......................................................... -55°C to 150°C
SG6509 .......................................................... -55°C to 150°C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating temperature of TA = 25°C for each diode. Low duty cycle pulse testing techniques
are used which maintains junction and case temperatures equal to the ambient temperature.)
Parameter
Test Conditions
Breakdown Voltage (VBR)
Forward Voltage (V )
F
Reverse Current (IR)
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (trr)
(Note 4)
IR = 10µA
Duty Cycle ≤ 2%, 300 µs pulse
IF = 100mA
IF = 200mA
I = 500mA
F
IF = 10mA, TA = -55°C
VR = 40V
VR = 40V, TA = 150°C
VR = 0V, f = 1MHz, Pin-to-pin
IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω
IF = IR = 200mA, irr = 20mA, RL = 100Ω
Note 4. The parameters, although guaranteed, are not 100% tested in production.
SG5768/SG6506
Min. Typ. Max.
60
Units
V
1.0 V
1.1 V
1.5 V
1.0 V
100 nA
50 µA
4
pf
40 ns
20
6/90 Rev 1.1 2/94
Copyright © 1994
LINFINITY Microelectronics Inc.
2
11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 ∞ FAX: (714) 893-2570
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