datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

1N6509 View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
View to exact match
1N6509
Microsemi
Microsemi Corporation Microsemi
1N6509 Datasheet PDF : 5 Pages
1 2 3 4 5
ELECTRICAL CHARACTERISTICS (continued)
Parameter
Test Conditions
Breakdown Voltage (VBR)
Forward Voltage (VF)
Reverse Current (IR)
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (t )
rr
(Note 4)
IR = 10µA, 100ms pulse, 20% Duty Cycle
Duty Cycle 2%, 300 µs pulse
I = 100mA
F
IF = 200mA
IF = 500mA
I = 10mA, T = -55°C
F
A
VR = 40V
VR = 40V, TA = 150°C
V = 0V, f = 1MHz, Pin-to-pin
R
IF = 500mA, tr 15ns, Vfr = 1.8V, RS = 50
IF = IR = 200mA, irr = 20mA, RL = 100
Parameter
Breakdown Voltage (VBR)
Forward Voltage (V )
F
Reverse Current (IR)
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (trr)
(Note 4)
Test Conditions
IR = 10µA, 100ms pulse, 20% Duty Cycle
Duty Cycle 2%, 300µs pulse
IF = 100mA
IF = 200mA
I = 500mA
F
IF = 10mA, TA = -55°C
VR = 40V
V = 40V, T = 150°C
R
A
VR = 0V, f = 1MHz, Pin-to-pin
I
F
=
500mA,
t
r
15ns,
V
fr
=
1.8V,
R
S
=
50
DIODE ARRAY SERIES
SG5770/SG6507
Min. Typ. Max.
60
Units
V
1.0 V
1.1 V
1.5 V
1.0 V
100 nA
50 µA
8
pf
40 ns
7 20 ns
SG5772/SG6508
SG5774/SG6509
Min. Typ. Max.
60
Units
V
1.0 V
1.1 V
1.5 V
1.0 V
100 nA
50 µA
8
pf
40 ns
7 20 ns
6/90 Rev 1.1 2/94
Copyright © 1994
LINFINITY Microelectronics Inc.
3
11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]