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X0619MA View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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X0619MA
ST-Microelectronics
STMicroelectronics ST-Microelectronics
X0619MA Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
X00619
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 6.
Relative variation of gate trigger,
holding and latching current versus
junction temperature
1.00 Zth(j-a)/Rth(j-a)
TO-92
SCU= 0.5 cm²
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1.6
1.4
1.2
1.0
Typical values
0.10
0.8
SOT-223
SCU= 5 cm²
0.6
IH and IL
0.4
IGT
tp(s)
0.2
Tj(°C)
0.01
0.0
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
-40
-20
0
20
40
60
80
100 120
Figure 7.
Relative variation of holding
current versus gate-cathode
resistance (typical values)
Figure 8.
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
IH[RGK] / IH[RGK=1kΩ]
3.5
3.0
100.0 dV/dt[RGK] / dV/dt[RGK=1kΩ]
VD= 0.67xVDRM
2.5
10.0
2.0
1.5
1.0
1.0
0.5
0.0
1.E-02
RGK(kΩ)
1.E-01
1.E+00
1.E+01
1.E+02
0.1
1.0E-01
RGK(kΩ)
1.0E+00
1.0E+01
Figure 9.
Relative variation of dV/dt immunity Figure 10. Surge peak on-state current versus
versus gate-cathode capacitance
number of cycles
(typical values)
dV/dt[CGK] / dV/dt[RGK=1kΩ]
100
VD= 0.67xVDRM
Rgk = 1 kΩ
ITSM(A)
10
9
8
7
Non repetitive
Tj initial=25 °C
tp=10ms
One cycle
6
10
5
4
Repetitive
Tl= 25 °C
3
2
CGK(nF)
1
Number of cycles
1
0
1
10
1
10
100
1000
4/10
Doc ID 15755 Rev 2
 

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