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X00619MA1AA2 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
X00619MA1AA2
ST-Microelectronics
STMicroelectronics ST-Microelectronics
X00619MA1AA2 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
X00619
Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
IT(RMS) On-state rms current (180 °Conduction angle)
IT(AV) Average on-state current (180 °Conduction angle)
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
di/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT, tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TO-92
TL = 83 °C
SOT-223 Tc = 107 °C
TO-92
TL = 83 °C
SOT-223 Tc = 107 °C
tp = 8.3 ms
Tj = 25 °C
tp = 10 ms
tp = 10 ms Tj = 25 °C
F = 60 Hz Tj = 125 °C
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
0.8
A
0.5
A
10
A
9
0.4
A2s
50
A/µs
1
A
0.1
W
- 40 to + 150
°C
- 40 to + 125
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C unless otherwise specified)
Test conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA, RGK = 1 kΩ
VD = 67% VDRM, RGK = 1 kΩ
Tj = 125 °C
Tj = 125 °C
MIN.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
Value
30
200
0.8
0.2
5
5
6
40
Unit
µA
V
V
V
mA
mA
V/µs
Table 4. Static electrical characteristics
Symbol
Test conditions
VTM
ITM = 1 A, tp = 380 µs
VTO
Threshold voltage
Rd
Dynamic resistance
IDRM IRRM VDRM = VRRM, RGK = 1 kΩ
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Value
Unit
1.35
V
0.85
V
MAX
245
mΩ
1
µA
100
µA
2/10
Doc ID 15755 Rev 2
 

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