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X0205NN1BA2 데이터 시트보기 (PDF) - STMicroelectronics

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X0205NN1BA2 1.25 A sensitive gate SCR ST-Microelectronics
STMicroelectronics ST-Microelectronics
X0205NN1BA2 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
X02
Figure 5.
Relative variation of triggering,
Figure 6.
holding and latching current versus
junction temperature
Relative variation of holding
current versus gate-cathode
resistance (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1.50
1.25
Typical values
1.00
0.75
IH & IL
RGK = 1kΩ
0.50
IGT
0.25
Tj(°C)
0.00
-40 -20 0 20 40 60 80 100 120 140
IH[RGK] / IH[RGK=1kΩ]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E-02
RGK(kΩ)
1.E-01
1.E+00
Tj=25
1.E+01
Figure 7.
Relative variation of dV/dt immunity Figure 8.
versus gate-cathode resistance
(typical values)
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
dV/dt[RGK] / dV/dt[RGK=1kΩ]
10.0
1.0
Tj = 125°C
VD = 0.67 x VDRM
RGK(kΩ)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
dV/dt[CGK] / dV/dt[RGK=1kΩ]
20
18
VD = 0.67 x VDRM
Tj = 125°C
16
RGK = 1kΩ
14
12
10
8
6
4
2
CGK(nF)
0
0
2
4
6
8 10 12 14 16 18 20 22
Figure 9. Surge peak on-state current
versus number of cycles
ITSM(A)
25
20
15
Non repetitive
Tj initial=25°C
10
Repetitive
Tamb=25°C
5
0
1
10
tp=10ms
One cycle
Number of cycles
100
1000
Figure 10. Non repetitive surge peak on state
current for a sinusoidal pulse and
corresponding value of I2T
ITSM(A), I2t (A2s)
300
100
dI/dt limitation
Tj initial = 25°C
ITSM
10
1
0.01
tp(ms)
0.10
1.00
I2t
10.00
4/11
Doc ID 7480 Rev 4
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