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# X0205NN1BA2 데이터 시트보기 (PDF) - STMicroelectronics

 부품명 상세내역 제조사 X0205NN1BA2 1.25 A sensitive gate SCR STMicroelectronics
X0205NN1BA2 Datasheet PDF : 11 Pages
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 Characteristics X02 Figure 5. Relative variation of triggering, Figure 6. holding and latching current versus junction temperature Relative variation of holding current versus gate-cathode resistance (typical values) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 1.50 1.25 Typical values 1.00 0.75 IH & IL RGK = 1kΩ 0.50 IGT 0.25 Tj(°C) 0.00 -40 -20 0 20 40 60 80 100 120 140 IH[RGK] / IH[RGK=1kΩ] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.E-02 RGK(kΩ) 1.E-01 1.E+00 Tj=25 1.E+01 Figure 7. Relative variation of dV/dt immunity Figure 8. versus gate-cathode resistance (typical values) Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) dV/dt[RGK] / dV/dt[RGK=1kΩ] 10.0 1.0 Tj = 125°C VD = 0.67 x VDRM RGK(kΩ) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 dV/dt[CGK] / dV/dt[RGK=1kΩ] 20 18 VD = 0.67 x VDRM Tj = 125°C 16 RGK = 1kΩ 14 12 10 8 6 4 2 CGK(nF) 0 0 2 4 6 8 10 12 14 16 18 20 22 Figure 9. Surge peak on-state current versus number of cycles ITSM(A) 25 20 15 Non repetitive Tj initial=25°C 10 Repetitive Tamb=25°C 5 0 1 10 tp=10ms One cycle Number of cycles 100 1000 Figure 10. Non repetitive surge peak on state current for a sinusoidal pulse and corresponding value of I2T ITSM(A), I2t (A2s) 300 100 dI/dt limitation Tj initial = 25°C ITSM 10 1 0.01 tp(ms) 0.10 1.00 I2t 10.00 4/11 Doc ID 7480 Rev 4
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