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X0202MUF1BA2 데이터 시트보기 (PDF) - STMicroelectronics

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X0202MUF1BA2 1.25 A sensitive gate SCR ST-Microelectronics
STMicroelectronics ST-Microelectronics
X0202MUF1BA2 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
X02
Characteristics
Table 5. Thermal resistances
Symbol
Rth(j-l)
Rth(j-t)
Rth(j-t)
Junction to leads (DC)
Junction to tab (DC)
Junction to tab (DC)
Parameter
Rth(j-a)
Junction to ambient (DC)
S = 5 cm2
TO-92
SOT-223
SMBflat-3L
TO-92
SOT-223
SMBflat-3L
Max.
Value
60
25
14
150
60
75
Unit
°C/W
Figure 1.
Maximum average power
dissipation versus average
on-state current (full cycle)
P(W)
1.2
360°
1.0
0.8
α
α = 180°
0.6
0.4
0.2
0.0
0
IT(AV)(A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Figure 2.
Average and DC on-state current
versus tab (SOT-223, SMBflat-3L) or
lead (TO-92) temperature
I (A)
1.4 T(AV)
1.2
D.C. (TO-92)
1.0
D.C. (SMBflat-3L)
D.C. (SOT-223)
0.8
α = 180° (TO-92)
0.6
0.4
α = 180° (SOT-223)
0.2
Tlead or Ttab (°C)
0.0
α = 180° (SMBflat-3L)
0
25
50
75
100
125
Figure 3. Average and DC on-state current
versus ambient temperature
I (A)
1.4 T(AV)
1.2
D.C. (SOT-223)
1.0 D.C. (SMBflat-3L)
0.8
D.C. (TO-92)
0.6
0.4 α = 180° (TO-92)
α = 180° (SOT-223)
0.2
Tamb(°C)
0.0
α = 180° (SMBflat-3L)
0
25
50
75
100
125
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
K=[Zth(j-a)/Rth(j-a)]
1.00
TO-92
SMBflat-3L
0.10
SOT-223
tp(s)
0.01
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05
Doc ID 7480 Rev 4
3/11
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