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X02 데이터 시트보기 (PDF) - STMicroelectronics

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X02 1.25 A sensitive gate SCR ST-Microelectronics
STMicroelectronics ST-Microelectronics
X02 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
X02
1
Characteristics
Table 2. Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
IT(RMS) On-state rms current (180 °Conduction angle)
IT(AV) Average on-state current (180 °Conduction angle)
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
di/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TO-92
TL = 63 °C
SOT-223 Ttab = 99 °C
1.25
A
SMBflat-3L Ttab = 111 °C
TO-92
TL = 63 °C
SOT-223 Ttab = 99 °C
0.8
A
SMBflat-3L Ttab = 111 °C
tp = 8.3 ms Tj = 25 °C
tp = 10 ms
tp = 10 ms Tj = 25 °C
25
A
22.5
2.5
A2s
F = 60 Hz Tj = 125 °C
50
A/µs
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
1.2
A
0.2
W
- 40 to + 150
- 40 to + 125
°C
Table 3.
Symbol
Electrical characteristics (TJ = 25 °C unless otherwise specified)
Test conditions
X0202
X0205
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA, RGK = 1 kΩ
VD = 67% VDRM, RGK = 1 kΩ
Tj = 125 °C
Tj = 110 °C
Min.
Max.
Max.
Min.
Min.
Max.
Max.
Min.
20
200
50
0.8
0.1
8
5
6
10
15
Unit
µA
V
V
V
mA
mA
V/µs
Table 4. Static electrical characteristics
Symbol
Test conditions
X0202 X0205
Unit
VTM
ITM = 2.5 A, tp = 380 µs
VTO
Threshold voltage
Rd
Dynamic resistance
IDRM IRRM VDRM = VRRM, RGK = 1 kΩ
Tj = 25 °C
1.45
V
0.9
V
Tj = 125 °C
Max.
200
mΩ
Tj = 25 °C
Tj = 125 °C
5
µA
500
µA
2/11
Doc ID 7480 Rev 4
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