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X0205NA-2BL2 데이터 시트보기 (PDF) - STMicroelectronics

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X0205NA-2BL2 1.25A SCRs ST-Microelectronics
STMicroelectronics ST-Microelectronics
X0205NA-2BL2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
X02 Series
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
IT(av)(A)
1.4
1.2
SOT-223
1.0
SOT-223
0.8
0.6
TO-92
0.4
0.2
0.0
0
TO-92
25
Tamb(°C)
50
75
100
125
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
0.10
SOT-223
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
Tj(°C)
0.00
-40 -20 0 20 40 60 80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
10.0 dV/dt[Rgk]/dV/dt [Rgk=1k]
Tj = 125°C
VD = 0.67xVDRM
1.0
Rgk(k)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1 k]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
Rgk(k)
1E-1
1E+0
Tj = 25°C
1E+1
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk = 1k]
20
18
16
14
12
10
8
6
4
2
Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
4/6
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