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X0205NA-2BL2 데이터 시트보기 (PDF) - STMicroelectronics

부품명X0205NA-2BL2 ST-Microelectronics
STMicroelectronics ST-Microelectronics
상세내역1.25A SCRs
X0205NA-2BL2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
X02 Series
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
IT(av)(A)
1.4
1.2
SOT-223
1.0
SOT-223
0.8
0.6
TO-92
0.4
0.2
0.0
0
TO-92
25
Tamb(°C)
50
75
100
125
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
0.10
SOT-223
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
Tj(°C)
0.00
-40 -20 0 20 40 60 80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
10.0 dV/dt[Rgk]/dV/dt [Rgk=1k]
Tj = 125°C
VD = 0.67xVDRM
1.0
Rgk(k)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1 k]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
Rgk(k)
1E-1
1E+0
Tj = 25°C
1E+1
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk = 1k]
20
18
16
14
12
10
8
6
4
2
Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
4/6
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DESCRIPTION
Thanks to highly sensitive triggering levels, the X02 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies,capacitive ignition circuits, ...
Available in though-hole or surface-mount packages, these devices are optimized in forward voltage drop and inrush current capabilities, for reduced power losses and high reliability in harsh environments.

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