datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

STW8NB80 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STW8NB80 Datasheet PDF : 5 Pages
1 2 3 4 5
STW8NB80
N - CHANNEL 800V - 1.2- 7.5A - TO-247
PowerMESHMOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STW8NB80
800 V
< 1.6
7.5 A
s TYPICAL RDS(on) = 1.2
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s HIGH CURRENT, HIGH SPEED SWITCHING
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
Unit
800
V
800
V
± 30
V
7.5
A
4.7
A
30
A
170
1.36
W
W/oC
4
V/ns
-65 to 150
oC
150
oC
(1) ISD ≤ 7.5 A, di/dt ≤ 200 Α/µs, VDD V(BR)DSS, Tj TJMAX
January 1999
1/5
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]