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VDA1220NNA View Datasheet(PDF) - AnaSem Semiconductors

Part Name
Description
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VDA1220NNA Datasheet PDF : 20 Pages
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Rev. C09-09
低电压,低功耗, ±1% 高精度电压检测 CMOS 电压检测器
VDA 系列
电子规格
项目
工作电压范围
检测电压
滯後现象范围
输出电流
电流功耗
流失电流
电压检测温度特征
延迟时间
VDRVOUT inversion
符号
条件
最低
VIN
VDET
VDET
VHYS
VDET = 0.8V ~ 6.0V
VDET = 1.8V ~ 6.0V
Ta = –40°C ~ +85°C
VDET = 0.8V ~ 1.7V
Ta = –40°C ~ +85°C
VIN=0.7V
VIN=1.0V
IOUT
N-ch
VDS=0.5V
VIN=2.0V
VIN=3.0V
VIN=4.0V
CMOS P-ch
VDS=2.1V
CMOS N-ch
VDS=2.1V
VIN=5.0V
VIN=6.0V
VIN=6.0V
VIN=1.5V
VIN=2.0V
ISS
VIN=3.0V
VIN=4.0V
VIN=5.0V
0.7
VDET
×0.99
VDET
×0.98
VDET
×0.02
0.1
1.0
3.0
5.0
6.0
7.0
-
1.5
-
-
-
-
-
ILEAK VIN=6.0V VOUT=6.0V
-
VDET = 1.8V ~ 6.0V
VDET / Ta = –40°C ~ +85°C
-
Ta•VDET VDET = 0.8V ~ 1.7V
Ta = –40°C ~ +85°C
-
TDLY Inverts from VDR to VOUT
-
一般
-
VDET
VDET
VDET
×0.05
0.35
2.3
8.2
11.1
12.8
13.8
-9.5
9.5
0.6
0.7
0.8
0.9
1.0
10
±20
±100
0.03
(Ta=25°C除非另有注明)
最高
单位
测试
电路
6.0
V
1
VDET
×1.01
V
1
VDET
×1.02
V
VDET
×0.08
V
1
-
mA
-
mA
-
mA
3
-
mA
-
mA
-
mA
-1.5
mA
4
-
mA 3
2.1
μA
2.5
μA
2.8
μA
2
3.0
μA
3.4
μA
100
nA
3
- ppm/°C
1
- ppm/°C
0.2
ms 5
AnaSem Inc.
5
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