UF840-TA3-T View Datasheet(PDF) - Unisonic Technologies
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Description
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UF840-TA3-T Datasheet PDF : 8 Pages
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UF840
TYPICAL CHARACTERISTICS(Cont.)
Figure 13. Transfer Characteristics
100 Pulse Duration=80μs
Duty Cycle = 0.5% Max
VDS≥50V
10
1
TJ = 150℃
0.1
TJ = 25℃
0.01
0
2
4
6
8
10
Gate to Source Voltage, VSD (V)
Figure 15. Normalized Drain to Source on
Resistance vs. Junction Temperature
3.0
Pulse Duration=80μs
Duty Cycle = 0.5% Max
2.4 VGS =10V, ID=4.4A
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, TJ (℃)
Figure 17. Capacitance vs. Drain to Source Voltage
3000
2400
1800
1200
600
CISS
VGS=0V,
f=1MHz
CISS =CGS+CGD
CRSS=CGD
COSS≈CDS+CGD
CRSS
COSS
0
1
2
5
10 2
5
102
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MOSFET
Figure 14. Drain to Source on Resistance vs.
Voltage and Drain Current
10
Pulse Duration=80μs
Duty Cycle = 0.5% Max
8
6
VGS=10V
4
2
VGS=20V
0
0
8
16
24
32
40
Case Temperature, TC (℃)
Figure 16. Normalized Drain to Source Breakdown Voltage
vs. Junction Temperature
1.25
ID=250μA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature, TJ (℃)
Figure 18. Transconductancevs. Drain Current
15 Pulse Duration=80μs
Duty Cycle = 0.5% Max
12 VDS≥50V
9
6
TJ= 25℃
TJ= 150℃
3
0
0
3
6
9
12
15
Drain Current, ID (A)
7 of 8
QW-R502-047,C
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