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UF840-TA3-T View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
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UF840-TA3-T
UTC
Unisonic Technologies UTC
UF840-TA3-T Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
UF840
MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25, unless Otherwise Specified.)
PARAMETER
Drain to Source Voltage (TJ =25~125)
Drain to Gate Voltage (RGS = 20k, TJ =25~125)
Gate to Source Voltage
Continuous
Drain Current
Tc = 100
SYMBOL
VDSS
VDGR
VGS
ID
RATINGS
500
500
±20
8.0
5.1
UNIT
V
V
V
A
A
Pulsed
IDM
Total Power Dissipation (Ta = 25℃)
Derating above 25
PD
32
A
125
W
1.0
W/
Single Pulse Avalanche Energy Rating
(VDD=50V, starting TJ =25, L=14mH, RG=25, peak IAS = 8A)
EAS
510
mJ
Operating Temperature Range
TOPR
-55 ~ +150
Storage Temperature Range
TSTG
-55 ~ +150
Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
SYMBOL
θJA
θJc
RATINGS
62.5
1.0
ELECTRICAL SPECIFICATIONS (Ta =25, unless Otherwise Specified.)
UNIT
/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 16)
500
Gate to Threshold Voltage
VGS(THR) VGS = VDS, ID = 250µA
2
On-State Drain Current (Note 1)
ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V
8
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS=0.8xRated BVDSS,VGS=0V,TJ= 125
Gate to Source Leakage Current
IGSS VGS = ±20V
Drain to Source On Resistance
(Note 1)
RDS(ON) ID = 4.4A, VGS = 10V (Figure 14, 15)
Forward Transconductance (Note 1) gFS VDS 50V, ID = 4.4A (Figure 18)
4.9
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tDLY(ON)
tR
tDLY(OFF)
VDD=250V, ID 8A, RG = 9.1, RL =30
(Note 2)
Fall Time
tF
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
QG(TOT)
QGS
QGD
VGS =10V, ID =8A,VDS =0.8 x Rated BVDSS
IG(REF) =1.5mA (Figure 20)
(Note 3)
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V, f = 1.0MHz
(Figure 17)
NOTE : 1. Pulse Test: Pulse width300µs, Duty Cycle2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX
4
25
250
±100
0.8 0.85
7.4
15 21
21 35
50 74
20 30
42 63
7
22
1225
200
85
UNIT
V
V
A
µA
µA
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-047,C
 

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