UBA2033TS View Datasheet(PDF) - Philips Electronics
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Description
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UBA2033TS Datasheet PDF : 20 Pages
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Philips Semiconductors
HF full bridge driver IC
Product specification
UBA2033
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611D”.
CONDITIONS
in free air
VALUE
100
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
High voltage
IHV
high voltage supply current
t < 0.5 s and VHV = 550 V
0
−
30
µA
IFSL, IFSR high voltage floating supply
t < 0.5 s and VFSL = VFSR = 564 V 0
−
30
µA
current
Start-up; powered via pin HV
Ii(HV)
VHV(rel)
HV input current
level of release power drive
voltage
VHV = 11 V; note 1
−
0.5 1.0 mA
11
12.5 14
V
VHV(UVLO)
VHV(hys)
VDD
reset level of power drive voltage
HV hysteresis voltage
internal supply voltage
VHV = 20 V
8.5 10
11.5 V
2.0 2.5 3.0 V
10.5 11.5 13.5 V
Start-up; powered via pin VDD
Ii(DD)
VDD(rel)
VDD input current
level of release power drive
voltage
VDD = 8.25 V; note 2
−
0.5
8.25 9.0
1.0 mA
9.75 V
VDD(UVLO)
VDD(hys)
reset level of power drive voltage
hysteresis voltage
5.75 6.5
2.0 2.5
7.25 V
3.0 V
Output stage
Ron(H)
Roff(H)
Ron(L)
Roff(L)
Io(source)
Io(sink)
Vdiode
tno
VFSL
higher MOSFETs on resistance VFSR = VFSL = 12 V (with respect 15
21
26
Ω
to SHR and SHL); Isource = 50 mA
higher MOSFETs off resistance VFSR = VFSL = 12 V (with respect 9
to SHR and SHL); Isink = 50 mA
14
18
Ω
lower MOSFETs on resistance VDD = 12 V; Isource = 50 mA
15
21
26
Ω
lower MOSFETs off resistance VDD = 12 V; Isink = 50 mA
9
14
18
Ω
output source current
VDD = VFSL = VFSR = 12 V;
130 180 −
mA
VGHR = VGHL = VGLR = VGLL = 0 V
output sink current
VDD = VFSL = VFSR = 12 V;
150 200 −
mA
VGHR = VGHL = VGLR = VGLL = 12 V
bootstrap diode voltage drop
non-overlap time
Idiode = 20 mA
1.7 2.1 2.5 V
−
−
250 ns
HS lockout voltage left
3.0 4.0 5.0 V
2002 Oct 08
8
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