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UBA2021P View Datasheet(PDF) - Philips Electronics

Part Name
Description
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UBA2021P
Philips
Philips Electronics Philips
UBA2021P Datasheet PDF : 20 Pages
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Philips Semiconductors
630 V driver IC for CFL and TL lamps
Product specification
UBA2021
CHARACTERISTICS
VVS = 11 V; VFS VS1 = 11 V; Tamb = 25 °C; all voltages referenced to ground; see Fig.7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
High voltage supply
IL
leakage current on high voltage pins VFS, VG1 and VS1 = 630 V
15
µA
Start-up state
VVS(reset)
VVS(start)
VVS(stop)
VVS(hys)
IVS(standby)
V(RHVVS)
VVS(clamp-start)
IVS(clamp)
Preheat mode
reset voltage
oscillator start voltage
oscillator stop voltage
supply voltage hysteresis
standby supply current at pin VS
voltage difference between pins RHV
and VS
clamp margin VVS(clamp) to VVS(start)
clamp current
T1 off; T2 on
VVS = 11 V; note 1
IRHV = 1.0 mA
note 2
VVS < 17 V
4.0 5.5 6.5 V
11.35 11.95 12.55 V
9.55 10.15 10.75 V
1.5 1.8 2.0 V
150 200 250 µA
0.7 0.8 1.0 V
0.2 0.3 0.4 V
14
35
mA
fstart
starting frequency
tg
conducting time T1 and T2
ICI(charge)
charge current at pin CI
ICI(discharge)
discharge current at pin CI
tph
preheat time
ICP(charge)
charge current at pin CP
ICP(discharge)
VCP(pk)
discharge current at pin CP
peak voltage difference at pin CP
VRS(ctrl)
control voltage at pin RS
Frequency sweep to ignition
VCI = 0 V
98
fstart = 108 kHz
VCI = 1.5 V; VRS = 0.3 V 38
108 118 kHz
3.2
µs
44
50
µA
VCI = 1.5 V; VRS = 0.9 V 79
93
107 µA
599 666 733 ms
VCP = 1 V
6.0
µA
VCP = 1 V
when timing
5.95
µA
2.5
V
note 3
636 600 564 mV
ICI(charge)
charge current at pin CI
fB
bottom frequency
tign
ignition time
Normal operation
VCI = 1.5 V; f 85 kHz
VCI at clamp level
0.8 1.0 1.2 µA
42.9
kHz
625
ms
fB
tg
tno
Itot
VRS(cap)
VRREF
VG1(on)
VG1(off)
VG2(on)
VG2(off)
RG1(on)
bottom frequency
conducting time T1 and T2
non-overlap conductance time
total supply current
capacitive mode control voltage
reference voltage
on voltage at pin G1
off voltage at pin G1
on voltage at pin G2
off voltage at pin G2
high side driver on resistance
fB = 43 kHz
fB = 43 kHz; note 4
note 5
note 6
IG1= 1 mA
IG1= 1 mA
IG2= 1 mA
IG2= 1 mA
V(G1 S1) = 3 V; note 7
41.21 42.90 44.59 kHz
10.2
µs
1.05 1.4 1.75 µs
0.85 1.0 1.1 mA
0
20
40
mV
2.425 2.5 2.575 V
10.5
V
0.3 V
10.5
V
0.3 V
100 126 152
2002 Aug 02
9
 

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