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TS1220600T View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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TS1220600T
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS1220600T Datasheet PDF : 12 Pages
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TN12, TS12 and TYNx12 Series
Characteristics
Table 3.
Symbol
Standard electrical characteristics (Tj = 25° C, unless otherwise specified)
Test Conditions
TN1215
B/H G
TYN
x12T x12
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125° C
Tj =125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
2
0.5
2
15
5
15
1.3
0.2
40 30 15 30
80 60 30 60
200
40 200
1.6
0.85
30
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 4. Thermal resistance
Symbol
Rth(j-c) Junction to case (DC)
Rth(j-a) Junction to ambient (DC)
1. S = Copper surface under tab
Parameter
S(1) = 0.5 cm² DPAK
S(1) = 1 cm² D2PAK
IPAK
TO-220AB
Value Unit
1.3 ° C/W
70
45
° C/W
100
60
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
Average and D.C. on-state current
versus case temperature
P(W)
12
11
α = 180°
10
9
8
7
6
5
4
3
360°
2
1
IT(AV)(A)
α
0
0
1
2
3
4
5
6
7
8
9
IT(AV)(A)
14
12
10
8
6
4
2
0
0
25
D.C.
α = 180°
Tcase(°C)
50
75
100
125
3/12
 

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