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BDV64B View Datasheet(PDF) - ON Semiconductor

Part Name
Description
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BDV64B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NPN
10K
BDV65B (NPN), BDV64B (PNP)
VCE = 4 V
PNP
10K
1K
1K
4
1
0.1
1
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
Figure 3. DC Current Gain
10
10
1
VBE(sat) @ IC/IB = 250
1
VBE(sat) @ IC/IB = 250
0.1
0.1
0.1
1
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 4. “On” Voltages
Figure 5. “On” Voltages
100
50
100 μs
20
5.0 ms 1.0 ms
10
dc
5
SECONDARY BREAKDOWN
LIMITED @ TJ v 150°C
1
THERMAL LIMIT @ TC = 25°C
BONDING WIRE LIMIT
BDV65B, BDV64B
1
10
30 50
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 6. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C, TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 7. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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