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BDV65B View Datasheet(PDF) - ON Semiconductor

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BDV65B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BDV65B (NPN),
BDV64B (PNP)
Complementary Silicon
Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose
amplifier applications.
Features
High DC Current Gain HFE = 1000 (min) @ 5 Adc
Monolithic Construction with Builtin Base Emitter Shunt Resistors
These are PbFree Devices*
MAXIMUM RATINGS
Rating
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current Continuous
Peak
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Max
100
100
5.0
10
20
0.5
125
1.0
-65 to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, JunctiontoCase
RqJC
1.0 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100120 VOLTS,
125 WATTS
NPN
COLLECTOR 2
PNP
COLLECTOR 2,4
BASE
1
BASE
1
EMITTER 3
BDV65B
EMITTER 3
BDV64B
1
2
3
SOT93
(TO218)
CASE 340D
TO247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 Rev. 14
Publication Order Number:
BDV65B/D
 

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