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TSAL5300-MSZ View Datasheet(PDF) - Vishay Semiconductors

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Description
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TSAL5300-MSZ Datasheet PDF : 0 Pages
TSAL5300
High Power Infrared Emitting Diode, Vishay Semiconductors
940 nm, GaAlAs/GaAs
96 11505
DESCRIPTION
TSAL5300 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
TSAL5300
45
Note
Test conditions see table “Basic Characteristics“
ϕ (deg)
± 22
λP (nm)
940
tr (ns)
800
ORDERING INFORMATION
ORDERING CODE
PACKAGING
TSAL5300
Bulk
TSAL5300-MSZ
Tape and ammopack
Note
MOQ: minimum order quantity
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 5000 pcs, 1000 pcs/ammopack
PACKAGE FORM
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t 5 s, 2 mm from case
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered
on PCB
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81008
Rev. 2.0, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
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