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TS944BIPT View Datasheet(PDF) - STMicroelectronics

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TS944BIPT Datasheet PDF : 19 Pages
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Electrical characteristics
2
Electrical characteristics
TS941 TS942 TS944
Table 3.
Symbol
VCC = +2.5V, VDD = 0V, RL connected to VCC/2, Tamb = 25°C (unless
otherwise specified)
Parameter
Min. Typ. Max. Unit
Input offset voltage
Vio
TS941/2/4
TS941/2/4A
TS941/2/4B
ΔVio Input offset voltage drift
Iio
Input offset current (1)
Iib
Input bias current (1)
CMR Common mode rejection ratio
60
SVR Supply voltage rejection ratio
50
Avd
VOH
VOL
Io
ICC
GBP
SR
φm
Large signal voltage gain
VO = 2Vpp, RL = 1MΩ
High level output voltage
VID = 100mV, RL = 1MΩ
RL = 10kΩ
Low level output voltage
VID = -100mV, RL = 1MΩ
RL = 10kΩ
Output source current
VID = 100mV, VO = VDD
Output sink current
VID = -100mV, VO = VCC
Supply current (per amplifier), AVCL = 1, no load
Gain bandwidth product, RL = 1MΩ, CL = 50pF
Slew rate, RL = 1MΩ, CL = 50pF
Phase margin, CL = 50pF
2.45
2.3
350
280
3
1. Maximum values include unavoidable inaccuracies of the industrial tests.
7
1
1
85
78
100
2.49
2.4
1
100
650
500
1.2
10
4.5
65
10
mV
5
2
µV/°C
100
pA
150
pA
dB
dB
dB
V
5
mV
200
µA
1.8
µA
kHz
V/ms
Degrees
4/19
 

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