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TS27M2IPT View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
TS27M2IPT Low-power CMOS dual operational amplifiers ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS27M2IPT Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TS27M2, TS27M2A, TS27M2B
Electrical characteristics
Table 3.
Electrical characteristics at VCC+ = +10 V, VCC- = 0 V, Tamb = +25° C
(unless otherwise specified) (continued)
Symbol
Parameter
TS27M2xC
TS27M2xI
TS27M2xM
Unit
Min. Typ. Max. Min. Typ. Max.
AC performance
GBP
Gain bandwidth product
Av = 40 dB, RL = 100 kΩ, CL = 100 pF,
fin = 100 kHz
0.5 1
Slew rate at unity gain
SR
RL = 100 kΩ, CL = 100 pF, Vi = 3 to 7 V
0.3 0.6
Phase margin at unity gain
φm
45
Av = 40 dB, RL = 100 kΩ, CL = 100 pF
KOV Overshoot factor
30
Equivalent input noise voltage
en
f = 1 kHz, Rs = 100 Ω
38
Vo1/Vo2 Channel separation
120
1. Maximum values including unavoidable inaccuracies of industrial tests.
0.5 1
0.3 0.6
45
30
38
120
MHz
V/μs
Degrees
%
---n---V-----
Hz
dB
Doc ID 2306 Rev 2
5/14
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