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TS27M2BIDT View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
TS27M2BIDT Low-power CMOS dual operational amplifiers ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS27M2BIDT Datasheet PDF : 14 Pages
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Electrical characteristics
2
Electrical characteristics
TS27M2, TS27M2A, TS27M2B
Table 3.
Electrical characteristics at VCC+ = +10 V, VCC- = 0 V, Tamb = +25° C
(unless otherwise specified)
Symbol
Parameter
TS27M2xC
TS27M2xI
TS27M2xM
Min. Typ. Max. Min. Typ. Max.
DC performance
Input offset voltage
VO = 1.4 V, Vic = 0 V TS27M2
TS27M2A
Vio
TS27M2B
Tmin Tamb Tmax
TS27M2
TS27M2A
TS27M2B
1.1 10
0.9 5
0.25 2
12
6.5
3
10
1.1 5
0.9 2
0.25 12
6.5
3.5
DVio
Iio
Iib
VOH
VOL
Avd
CMR
SVR
ICC
Io
Isink
Input offset voltage drift
Input offset current (1)
Vic = 5 V, VO = 5 V
Tmin Tamb Tmax
Input bias current (1)
Vic = 5 V, VO = 5 V
Tmin Tamb Tmax
High level output voltage
Vid = 100 mV, RL = 100 lΩ
Tmin Tamb Tmax
Low level output voltage
Vid = -100 mV
Large signal voltage gain
ViC = 5 V, RL = 100 kΩ, Vo = 1 V to 6 V
Tmin Tamb Tmax
Common mode rejection ratio
ViC = 1 V to 7.4 V, Vo = 1.4 V
Supply voltage rejection ratio
VCC+ = 5 V to 10 V, Vo = 1.4 V
Supply current (per amplifier)
Av = 1, no load, Vo = 5 V
Tmin Tamb Tmax
Output short circuit current
Vo = 0 V, Vid = 100 mV
Output sink current
Vo = VCC, Vid = -100 mV
2
2
1
100
1
200
1
150
1
300
8.7 8.9
8.6
8.7 8.9
8.5
50
50
30 50
20
30 50
10
65 80
65 80
60 80
60 80
150 200
250
45 60
150 200
300
60
34 45
45
Unit
mV
µV/°C
pA
pA
V
mV
V/mV
dB
dB
µA
mA
mA
4/14
Doc ID 2306 Rev 2
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