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TS1220-X00B-TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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TS1220-X00B-TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS1220-X00B-TR Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
TN12, TS12 and TYNx12 Series
Fig. 8: Surge peak on-state current versus
number of cycles (TS12/TN12/TYN).
dV/dt[Rgk] / dV/dt [Rgk = 220]
10.0
Tj = 125°C
VD = 0.67 x VDRM
1.0
Rgk(k)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
200
100
Tj max.:
Vto = 0.85V
Rd = 30m
Tj = Tjmax.
10
Tj = 25°C
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I t.
ITSM(A),I2t(A2s)
2000
1000
100
dI/dt
limitattion
ITSM
Tjinitial=25°C
TYN/TN12
TS12
TYN/TN12
I2t
TS12
10
0.01
tp(ms)
0.10
1.00
10.00
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm) .
Rth(j-a)(°C/W)
100
80
60
DPAK
40
D2PAK
20
S(cm2)
0
0 2 4 6 8 10 12 14 16 18 20
6/10
 

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