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TS1220-XXXH View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
TS1220-XXXH SENSITIVE & STANDARD(12A SCRs) ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS1220-XXXH Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
TN12, TS12 and TYNx12 Series
Fig. 3-2: Relative variation of thermal
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board).
K = [Zth(j-a)/Rth(j-a)]
1.00
0.10
DPAK
D2PAK
TO-220AB
0.01
1E-2
1E-1
tp(s)
1E+0 1E+1
1E+2 5E+2
Fig. 4-1: Relative variation of gate trigger
current, holding current and latching versus
junction temperature for TS12 series.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
2.0
1.8
IGT
1.6
1.4
1.2
1.0
IH & IL
Rgk = 1k
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 4-2: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature for TN12 & TYN
series.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
2.4
2.2
2.0
IGT
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0
Tj(°C)
20 40 60 80
IH & IL
100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS12 series.
dV/dt[Rgk] / dV/dt [Rgk = 220]
10.0
Tj = 125°C
VD = 0.67 x VDRM
1.0
Rgk(k)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS12 series.
IH[Rgk] / IH[Rgk = 1k]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
Rgk(k)
1E-1
1E+0
Tj = 25°C
1E+1
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values)
for TS12 series.
dV/dt[Cgk] / dV/dt [Rgk = 220]
4.0
VD = 0.67 x VDRM
3.5 Tj = 125°C
Rgk = 220
3.0
2.5
2.0
1.5
1.0
0.5
Cgk(nF)
0.0
0
25
50
75
100 125 150
5/10
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