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TPD1039S View Datasheet(PDF) - Toshiba

Part NameTPD1039S Toshiba
Toshiba Toshiba
DescriptionLow-Side Switch for Motor, Solenoid and Lamp Drive


TPD1039S Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Truth Table
VIN
VDRAIN
State
L
H
H
L
Normal
L
H
Overcurrent
H
L
L
H
Overtemperature
H
H
TPD1039S
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain current
Input voltage
Power dissipation (Ta = 25°C)
Single pulse active clamp capability
(Note 1)
Active clamp current
Repetitive active clamp capability
(Note 2)
Operating temperature
Channel temperature
Storage temperature range
VDS (DC)
ID (DC)
VIN
PD
EAS
IAR
EAR
Topr
Tch
Tstg
45
V
1.5
A
0.5~6
V
0.9
W
20
mJ
1.5
A
0.09
mJ
40~85
°C
150 (Note 3) °C
55~150
°C
Note 1: Active clamp capability (single pulse) test condition
VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 1.5 A, RG = 25 Ω
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
Note 3: Overtemperature protection will work when the channel temperature exceeds 125°C.
Be sure to operate the device in such a way that the channel temperature does not exceed 125°C.
Note4:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
Rth (ch-a)
Max
Unit
139
°C/W
3
2006-10-31
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TPD1039S is a monolithic power IC for low-side switch.
The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC offers intelligent self-protection functions.

Features
• A monolithic power IC with a new structure combining a
   control block and a vertical power MOSFET (π-MOS) on a single chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage, overheat, and overcurrent.
• Low ON-resistance: RDS (ON) = 0.25 Ω (max) (@VIN = 5 V, Tch = 25°C)
• Package TO-92 (MOD) can be packed in tape.

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