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SMP50-200 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
SMP50-200
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMP50-200 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
SMP50 / SMTPA / TPA
Figure 9. Test circuit 1 for Dynamic IBO and VBO parameters
100 V / µs, di /dt < 10 A / µs, Ipp = 50 A
2Ω
U
10 µF
45 Ω
66 Ω 470 Ω
83 Ω
0.36 nF
46 µH
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A
26 µH
250 Ω
47 Ω
46 µH
U
60 µF
12 Ω
KeyTek 'System 2' generator with PN246I module
Figure 10. Test circuit 2 for IBO and VBO parameters
K
ton = 20ms
R1 = 140Ω
220V 50Hz
Vout
R2 = 240Ω
DUT
1/4
IBO
measurement
VBO
measurement
TEST PROCEDURE
Pulse test duration (tp = 20ms):
for Bidirectional devices = Switch K is closed
for Unidirectional devices = Switch K is open
VOUT selection:
Device with VBO > 200V VOUT = 250 VRMS, R1 = 140Ω
Device with VBO 200V VOUT = 480 VRMS, R2 = 240Ω
Figure 11. Test circuit 3 for dynamic IH parameters
R
VBAT = - 48 V
D.U.T
Surge generator
6/11
This is a GO-NOGO test which allows to confirm the holding current (IH) level in a
functional test circuit.
TEST PROCEDURE
1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2/ Fire the D.U.T. with a surge current IPP = 10A, 10/1000µs.
3/ The D.U.T. will come back off-state within 50ms maximum.
 

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