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SMP50-200 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
SMP50-200
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMP50-200 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SMP50 / SMTPA / TPA
Characteristics
Figure 3. On-state voltage versus on-state
current (typical values)
Figure 4.
Relative variation of holding
current versus junction
temperature
IT(A)
50
IH[Tj] / IH[Tj=25°C]
2.0
1.8
20
Tj=25°C
1.6
1.4
10
1.2
1.0
5
0.8
0.6
2
0.4
VT(V)
0.2
Tj(°C)
1
0.0
0
1
2
3
4
5
6
7
8
9
10
-40
-20
0
20
40
60
80
100
120
Figure 5.
Relative variation of breakover
voltage versus junction
temperature
VBO[Tj] / VBO[Tj=25°C]
1.10
1.05
1.00 270 V
Figure 6.
Relative variation of leakage
current versus reverse voltage
applied (typical values)
IRM[Tj] / IRM[Tj=25°C]
2000
1000
VR=VRM
100
0.95
62 V
0.90
-40
-20
10
Tj(°C)
0
20
40
60
80
100
1
25
Tj(°C)
50
75
100
125
Figure 7.
Variation of thermal impedance Figure 8.
junction to ambient versus pulse
duration (Printed circuit board FR4,
SCu = 35 µm, recommended pad
layout)
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
Zth(j-a)(°C/W)
1E+2
1E+1
SMTPA / TPA
C[VR] / C[VR=50V]
2.5
2.0
1.5
Tj=25°C
F=1MHz
VRMS=1V
1E+0
SMP50
1.0
0.5
tp(s)
VR(V)
1E-1
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1
2
5
10
20
50
100
300
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