TYNX08RG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
TYNX08RG Datasheet PDF : 10 Pages
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TN8, TS8 and TYNx08 Series
■ STANDARD
Symbol
Test Conditions
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
IT = 100 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open Tj =125°C
ITM = 16 A tp = 380 µs
Tj = 25°C
Threshold voltage
Tj = 125°C
Dynamic resistance
Tj = 125°C
VDRM = VRRM
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TN805
0.5
5
TN815
2
15
TYNx08
2
15
1.3
0.2
25
40
30
30
50
70
50
150
150
1.6
0.85
46
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 6: Thermal resistance
Symbol
Rth(j-c) Junction to case (D.C.)
Rth(j-a) Junction to ambient (D.C.)
S = Copper surface under tab.
Parameter
S = 0.5 cm²
DPAK
IPAK
TO-220AB
Value Unit
20 °C/W
70
100 °C/W
60
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
8
7
α = 180°
6
5
4
3
2
1
0
0
1
IT(AV)(A)
2
3
4
360°
α
5
6
Figure 2: Average and D.C. on-state current
versus case temperature
IT(AV)(A)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
25
D.C.
α = 180°
Tcase(°C)
50
75
100
125
3/10
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