TYN608RG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
TYN608RG Datasheet PDF : 14 Pages
| |||
TN805, TN815, TS820, TYN608
Characteristics
Figure 9.
Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity
versus gate-cathode resistance
versus gate-cathode capacitance
(typical values) for TS820
(typical values) for TS820
dV/dt[RGK] / dV/dt[RGK=220Ω]
10.00
Tj = 125°C
VD = 0.67 x VDRM
dV/dt[CGK] / dV/dt[RGK=220Ω]
15.0
12.5
VD = 0.67 x VDRM
Tj = 125°C
RGK = 220Ω
1.00
10.0
7.5
0.10
5.0
0.01
0
RGK(kΩ)
200 400 600 800 1000 1200 1400 1600 1800 2000
2.5
CGK(nF)
0.0
0 20 40 60 80 100 120 140 160 180 200 220
Figure 11. Surge peak on-state current versus Figure 12. Non-repetitive surge peak on-state
number of cycles
current and corresponding values
of I2t
ITSM(A)
100
90
80
70
60
TN8 / TS8
50
40
30
20
10
0
1
TYN08
Non repetitive
Tj initial=25°C
Repetitive
TC=110°C
Number of cycles
10
100
ITSM(A), I2t (A2s)
1000
Tj initial = 25°C
tp=10ms
One cycle
1000
100
10
0.01
dI/dt limitation
Sinusoidal pulse width tp < 10 ms
tp(ms)
0.10
ITSM
TYN08
TN8 / TS8
TYN08
I2t
TN8 / TS8
1.00
10.00
Figure 13. On-state characteristics (maximum Figure 14. Thermal resistance junction to
values)
ambient versus copper surface
under tab (DPAK)
50.0
10.0
ITM(A)
Tj max.:
Vt0=0.85V
Rd=46mΩ
Rth(j-a)(°C/W)
100
80
Epoxy printed circuit board FR4
copper thickness = 35 µm
Tj=max
60
1.0
40
Tj=25°C
20
VTM(V)
S(cm²)
0.1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8 10 12 14 16 18 20
Doc ID 7476 Rev 7
5/13
|
|
Share Link: 