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TMP12FS View Datasheet(PDF) - Analog Devices

Part Name
Description
View to exact match
TMP12FS
ADI
Analog Devices ADI
TMP12FS Datasheet PDF : 0 Pages
TMP12
WAFER TEST LIMITS (VS = ؉5 V, GND = O V, TA = ؉25°C, unless otherwise noted.)
Parameter
Symbol Conditions
Min Typ Max Units
ACCURACY
Accuracy (High, Low Setpoints)
Internal Scale Factor
TA = ؉25°C
TA = ؉25°C
؉4.9 ؉5
؎3 °C
؉5.1 mV/°C
SETPOINT INPUTS
Input Bias Current
IB
100 nA
VREF OUTPUT
Output Voltage
VREF
TA = ؉25°C, No Load 2.49
2.51 V
OPEN-COLLECTOR OUTPUTS
Output Low Voltage
Output Leakage Current
VOL
ISINK = 1.6 mA
IOH
VS = 12 V
0.4 V
100 µA
HEATER
Resistance
RH
TA = ؉25°C
97
100 103
POWER SUPPLY
Supply Range
Supply Current
؉VS
4.5
ISY
Unloaded at ؉5 V
5.5 V
600 µA
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
DICE CHARACTERISTICS
Die Size 0.078 ؋ 0.071 inch, 5,538 sq. mils
(1.98 ؋ 1.80 mm, 3.57 sq. mm)
Transistor Count: 105
8
7
6
1
2
3
5
1. VREF
2. SET HIGH INPUT
3. SET LOW INPUT
4. GND
5. HEATER
6. UNDER OUTPUT
7. OVER OUTPUT
8. V؉
4
For additional DICE ordering information, refer to databook.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the TMP12 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. 0
–3–
WARNING!
ESD SENSITIVE DEVICE
 

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