TLP285
Absolute Maximum Ratings (Ta = 25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
IF(RMS)
50
mA
Forward Current Derating
∆IF /°C
−1.0 (Ta≥75°C)
mA /°C
Pulse Forward Current (Note2)
IFP
1
A
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
Collector-Emitter Voltage
VCEO
80
V
Emitter-Collector Voltage
VECO
7
V
Collector Current
IC
50
mA
Collector Power Dissipation
Collector Power Dissipation
Derating(Ta≥25°C)
PC
∆PC /°C
150
mW
−1.5
mW /°C
Junction Temperature
Tj
125
°C
Operating Temperature Range
Topr
−55 to 110
°C
Storage Temperature Range
Tstg
−55 to 125
°C
Lead Soldering Temperature
Tsol
260 (10s)
°C
Total Package Power Dissipation
Total Package Power Dissipation
Derating (Ta≥25°C)
PT
∆PT /°C
200
mW
−2.0
mW /°C
Isolation Voltage
(Note3)
BVS
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2 : Pulse width ≤ 100μs, frequency 100Hz
Note3 : AC, 1 minute, R.H.≤60%, Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics (Ta = 25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
Forward Voltage
VF
IF = 10 mA
1.0
Reverse Current
IR
VR = 5 V
—
Capacitance
CT
V = 0, f = 1 MHz
—
Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA
80
Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA
7
Collector Dark Current
(Note5)
ICEO
VCE = 48 V,
Ambient Light Below
(100 ℓx)
—
(Note 4)
VCE = 48 V, Ta = 85°C
Ambient Light Below
—
(100 ℓx)
(Note 4)
Capacitance
(Collector to Emitter)
CCE
V = 0, f = 1 MHz
—
Note.4 :Irradiation to marking side using standard light bulb.
Note 5 :Because of the construction, leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
TYP. MAX UNIT
1.15 1.3
V
—
10
μA
30
—
pF
—
—
V
—
—
V
0.01 0.1
(2) (10)
μA
2
(4)
50
(50)
μA
10
—
pF
3
2009-05-27