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TLP285-GB-TPF View Datasheet(PDF) - Toshiba

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Description
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TLP285-GB-TPF Datasheet PDF : 16 Pages
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TLP285
Absolute Maximum Ratings (Ta = 25)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
IF(RMS)
50
mA
Forward Current Derating
IF /°C
1.0 (Ta75°C)
mA /°C
Pulse Forward Current (Note2)
IFP
1
A
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
Collector-Emitter Voltage
VCEO
80
V
Emitter-Collector Voltage
VECO
7
V
Collector Current
IC
50
mA
Collector Power Dissipation
Collector Power Dissipation
Derating(Ta25°C)
PC
PC /°C
150
mW
1.5
mW /°C
Junction Temperature
Tj
125
°C
Operating Temperature Range
Topr
55 to 110
°C
Storage Temperature Range
Tstg
55 to 125
°C
Lead Soldering Temperature
Tsol
260 (10s)
°C
Total Package Power Dissipation
Total Package Power Dissipation
Derating (Ta25°C)
PT
PT /°C
200
mW
2.0
mW /°C
Isolation Voltage
(Note3)
BVS
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2 : Pulse width 100μs, frequency 100Hz
Note3 : AC, 1 minute, R.H.60%, Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics (Ta = 25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
Forward Voltage
VF
IF = 10 mA
1.0
Reverse Current
IR
VR = 5 V
Capacitance
CT
V = 0, f = 1 MHz
Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA
80
Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA
7
Collector Dark Current
(Note5)
ICEO
VCE = 48 V,
Ambient Light Below
(100 x)
(Note 4)
VCE = 48 V, Ta = 85°C
Ambient Light Below
(100 x)
(Note 4)
Capacitance
(Collector to Emitter)
CCE
V = 0, f = 1 MHz
Note.4 :Irradiation to marking side using standard light bulb.
Note 5 :Because of the construction, leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
TYP. MAX UNIT
1.15 1.3
V
10
μA
30
pF
V
V
0.01 0.1
(2) (10)
μA
2
(4)
50
(50)
μA
10
pF
3
2009-05-27
 

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