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TLP351 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
TLP351 Photocoupler GaA?As IRED + Photo IC Toshiba
Toshiba Toshiba
TLP351 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TOSHIBA Photocoupler GaAAs IRED + Photo IC
TLP351
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
TLP351
Unit: mm
The TOSHIBA TLP351 consists of a GaAAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power
IGBTs.
Peak output current: ±0.6 A (max)
Guaranteed performance over temperature: 40 to 100°C
Supply current: 2 mA (max)
Power supply voltage: 10 to 30 V
Threshold input current : IF = 5 mA (max)
Switching time (tpLH/tpHL) : 700 ns (max)
Common mode transient immunity: 10 kV/μs
Isolation voltage: 3750 Vrms
Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage
: 4000VPK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Pin Configuration (top view)
1
8
1: NC
2: Anode
3: Cathode
2
7
4: NC
5: GND
3
6
6: VO (output)
7: NC
4
5
8: VCC
Schematic
IF
2+
VF
3
(Tr1)
ICC
VCC
8
IO
(Tr2)
VO
6
GND
5
A 0.1 μF bypass capacitor must be connected
between pin 8 and 5.
1
2007-10-01
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