TLP3240 View Datasheet(PDF) - Toshiba
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TLP3240 Datasheet PDF : 7 Pages
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TLP3240
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta >= 25°C)
Reverse voltage
Junction temperature
Off-State output terminal voltage
On-State current
On-State current derating (Ta >= 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 min., R.H. <= 60%) (Note 1)
IF
ΔIF/°C
VR
Tj
VOFF
ION
ΔION/°C
Tj
Tstg
Topr
Tsol
BVS
30
−0.3
5
125
40
120
−1.2
125
−40~125
−20~85
260
1500
mA
mA/°C
V
°C
V
mA
mA/°C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
Recommended Operating Conditions
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
Forward current
Operating temperature
VDD
IF
Topr
⎯
⎯
32
V
⎯
⎯
20
mA
25
⎯
60
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Off-state current
Symbol
VF
IR
CT
IOFF
Test Condition
IF = 5 mA
VR = 5 V
V = 0, f = 1 MHz
VOFF = 35 V
Capacitance
COFF
V = 0, f = 100 MHz, t<1s
Min.
Typ.
Max. Unit
1.15
1.30
1.45
V
⎯
⎯
10
μA
⎯
30
⎯
pF
⎯
10
200
pA
⎯
0.45
0.8
pF
2
2007-10-01
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