TLP283 View Datasheet(PDF) - Toshiba
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Description
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TLP283 Datasheet PDF : 7 Pages
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TLP283,TLP283-4
Absolute Maximum Ratings (Ta = 25℃)
CHARACTERISTIC
SYMBOL
RATING
TLP283
TLP283−4
UNIT
Forward Current
IF
50
mA
Forward Current Derating
Pulse Forward Current
Reverse Voltage
Junction Temperature
∆IF /°C
IFP
VR
Tj
−0.7 (Ta≥53°C) −0.5 (Ta≥25°C)
1
5
125
mA /°C
A
V
°C
Collector-Emitter Voltage
VCEO
100
V
Emitter-Collector Voltage
VECO
7
V
Collector Current
Collector Power Dissipation
(1 Circuit)
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
IC
PC
∆PC /°C
50
150
100
−1.5
−1.0
mA
mW
mW /°C
Junction Temperature
Tj
125
°C
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
Topr
Tstg
Tsol
PT
∆PT /°C
−55~100
−55~125
260 (10s)
200
170
−2.0
−1.7
°C
°C
°C
mW
mW /°C
Isolation Voltage
(Note2)
BVS
2500(AC,1min,R.H.≤60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note2) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted
together.
Individual Electrical Characteristics (Ta = 25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Forward Voltage
VF
IF = 10 mA
1.0
Reverse Current
IR
VR = 5 V
—
Capacitance
CT
V = 0, f = 1 MHz
—
Collector-Emitter
V(BR) CEO IC = 0.5 mA
100
Breakdown Voltage
Emitter-Collector
V(BR) ECO IE = 0.1 mA
7
Breakdown Voltage
VCE = 48 V,
Ambient Light Below
—
Collector Dark Current
(Note3)
ICEO
(100 ℓx)
VCE = 48 V, Ta = 85°C
Ambient Light Below
—
(100 ℓx)
Capacitance
(Collector to Emitter)
CCE
V = 0, f = 1 MHz
—
(Note3) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
TYP.
1.15
—
30
—
—
0.01
(2)
2
(4)
10
MAX. UNIT
1.3
V
10
μA
—
pF
—
V
—
V
0.1
(10)
μA
50
(50)
μA
—
pF
2
2007-10-01
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