TLN117F View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
TLN117F Datasheet PDF : 5 Pages
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Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Radiant intensity
Radiant power
Capacitance
Peak emission wavelength
Spectral line half width
Half value angle
Symbol
VF
IR
IE
PO
CT
λP
Δλ
θ1
2
Test Condition
IF = 10mA
VR = 5V
TLN117(F)
IF = 20mA
TLN117(B,F)
TLN117(C,F)
IF = 20mA
VR = 0, f = 1MHz
IF = 20mA
IF = 20mA
IF = 20mA
TLN117(F)
Min Typ. Max Unit
1.0 1.15 1.3
V
―
―
10
μA
0.8
―
―
2
―
7.5 mW / sr
5
― 18.7
―
2.5
―
mW
―
30
―
pF
―
940
―
nm
―
50
―
nm
―
±15
―
°
Precautions
Please be careful of the followings.
1. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
2. Radiation intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
IE (t) = PO (t)
IE (0) PO (0)
2
2007-10-01
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