TLN117F View Datasheet(PDF) - Toshiba

Part Name

Description

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TLN117F

Infrared LED GaAs Infrared Emitter

Toshiba 

TOSHIBA Infrared LED GaAs Infrared Emitter

TLN117(F)

Lead(Pb)-Free

Opto−Electoronic Switches

Floppy Disk Drives

Optical Mice

Optical Touch Sensors

• Small−side−view epoxy−resin package

• High radiant intensity: IE = 0.8mW / sr(min)at IF = 20mA

• Half−angle value: θ1 / 2 = ±15°(typ.)

TLN117(F)

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Forward current

IF

50

mA

Pulse forward current

IFP

600 (Note 1)

mA

Forward current derating

(Ta > 25°C)

Reverse voltage

Operating temperature

ΔIF / °C

VR

Topr

−0.33

5

−25~85

mA / °C

V

°C

TOSHIBA

4−3P1

Weight: 0.1 g (typ.)

Storage temperature

Tstg

−40~100

°C

Soldering temperature (5s)

Tsol

260 (Note 2)

°C

Pin Connection

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

1. Cathode

1

2 2. Anode

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Pulse width ≦ 100μs, repetitive frequency =100Hz

Note 2: Soldering must be performed 2mm from the bottom of the package body.

1

2007-10-01

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