ENHANCED-JFET LOW-POWER LOW-OFFSET
SLOS180C – FEBRUARY 1997 – REVISED DECEMBER 2001
PARAMETER MEASUREMENT INFORMATION
Typical values presented in this data sheet represent the median (50% point) of device parametric performance.
input bias and offset current
At the picoampere bias current level typical of the TL03x and TL03xA, accurate measurement of the bias current
becomes difficult. Not only does this measurement require a picoammeter, but test-socket leakages easily can
exceed the actual device bias currents. To accurately measure these small currents, Texas Instruments uses
a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but with
no device in the socket. The device is then inserted into the socket and a second test that measures both the
socket leakage and the device input bias current is performed. The two measurements are then subtracted
algebraically to determine the bias current of the device.
With the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage density
is performed at f = 1 kHz, unless otherwise noted.
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