K30A06N1 View Datasheet(PDF) - Toshiba

Part Name

Description

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K30A06N1

MOSFETs Silicon N-channel MOS (U-MOS-H)

Toshiba 

TK30A06N1

6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Test Condition

Reverse drain current (DC)

Reverse drain current (pulsed)

(Note 5)

(Note 5)

IDR



IDRP

Diode forward voltage

VDSF IDR = 30 A, VGS = 0 V

Reverse recovery time

Reverse recovery charge

(Note 6)

(Note 6)

trr

IDR = 30 A, VGS = 0 V

Qrr

-dIDR/dt = 100 A/µs

Note 5: Ensure that the channel temperature does not exceed 150.

Note 6: Ensure that VDS peak does not exceed VDSS.

7. Marking (Note)

Min Typ. Max Unit





30

A





95





-1.2

V



39



ns



39



nC

Fig. 7.1 Marking

Note:

A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on

the restriction of the use of certain hazardous substances in electrical and electronic equipment.

4

2012-09-20

Rev.4.0

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