datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga

J11A10M3 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
fabricante
J11A10M3 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
TJ11A10M3
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±0.1
µA
Drain cut-off current
IDSS VDS = -100 V, VGS = 0 V
-10
Drain-source breakdown voltage
Drain-source breakdown voltage
(Note 3)
V(BR)DSS ID = -10 mA, VGS = 0 V
V(BR)DSX ID = -10 mA, VGS = 20 V
-100
V
-75
Gate threshold voltage
Vth
VDS = -10 V, ID = -1 mA
-2.0
-4.0
Drain-source on-resistance
RDS(ON) VGS = -10 V, ID = -5.5 A
100 130 m
Forward transfer admittance
|Yfs| VDS = -10 V, ID = -5.5 A
15
30
S
Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
tr
ton
tf
toff
VDS = -10 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1.
Min Typ. Max Unit
3200
pF
135
190
12
ns
28
41
290
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
Qg
VDD -80 V, VGS = -10 V, ID = -11 A
69
nC
Qgs1
Qgd
9.4
20
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
(Note 4)
(Note 4)
IDR
IDRP
VDSF
IDR = -11 A, VGS = 0 V
Reverse recovery time
Reverse recovery charge
trr
IDR = -11 A, VGS = 0 V
Qrr
dIDR/dt = 50 A/µs
Note 4: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
-11
A
-22
1.4
V
70
ns
95
nC
3
2012-08-31
Rev.1.0
 

Share Link: 

datasheetbank.com [ Política De Privacidad ]