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J11A10M3 Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
fabricante
J11A10M3 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = -25 V, Tch = 25(initial), L = 500 µH, RG = 25 , IAR = -11 A
TJ11A10M3
Symbol
Rth(ch-c)
Rth(ch-a)
Max
Unit
5.2
/W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2012-08-31
Rev.1.0
 

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