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J11A10M3 Ver la hoja de datos (PDF) - Toshiba

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J11A10M3 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ11A10M3
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 100 m(typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
(3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ11A10M3
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-100
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
-11
A
Drain current (pulsed)
(Note 1)
IDP
-22
Power dissipation
(Tc = 25)
PD
24
W
Single-pulse avalanche energy
(Note 2)
EAS
37
mJ
Avalanche current
IAR
-11
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-08-31
Rev.1.0
 

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