TIPL762 View Datasheet(PDF) - Power Innovations Ltd
Part Name
Description
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TIPL762 Datasheet PDF : 8 Pages
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TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
TIPL762
400
VCEO(sus) sustaining voltage
IC = 100 mA L = 25 mH
(see Note 2)
TIPL762A
450
VCE = 850 V VBE = 0
TIPL762
50
Collector-emitter
ICES cut-off current
VCE = 1000 V
VCE = 850 V
VBE = 0
VBE = 0
TC = 100°C
TIPL762A
TIPL762
50
200
VCE = 1000 V VBE = 0
TC = 100°C
TIPL762A
200
ICEO
Collector cut-off
current
VCE = 400 V
VCE = 450 V
IB = 0
IB = 0
TIPL762
50
TIPL762A
50
Emitter cut-off
IEBO
current
VEB = 10 V IC = 0
1
Forward current
hFE
transfer ratio
VCE = 5 V IC = 0.5 A
(see Notes 3 and 4)
20
60
Collector-emitter
VCE(sat) saturation voltage
Base-emitter
VBE(sat) saturation voltage
Current gain
ft
bandwidth product
IB = 0.4 A
IB = 0.8 A
IB = 1.2 A
IB = 1.2 A
IB = 0.4 A
IB = 0.8 A
IB = 1.2 A
IB = 1.2 A
VCE = 10 V
IC = 2 A
IC = 4 A
IC = 6 A
IC = 6 A
IC = 2 A
IC = 4 A
IC = 6 A
IC = 6 A
IC = 0.5 A
(see Notes 3 and 4)
TC = 100°C
(see Notes 3 and 4)
TC = 100°C
f = 1 MHz
0.5
1.0
2.5
5.0
1.1
1.3
1.5
1.4
6
Cob Output capacitance VCB = 20 V IE = 0
f = 0.1 MHz
105
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
µA
mA
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1.25 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS †
MIN
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
IC = 6 A
VBE(off) = -10 V
txo
Cross over time
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
IC = 6 A
VBE(off) = -10 V
txo
Cross over time
IB(on) = 1.2 A
IB(on) = 1.2 A
TC = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
TYP MAX
2.5
200
150
50
300
3
300
150
50
500
UNIT
µs
ns
ns
ns
ns
µs
ns
ns
ns
ns
PRODUCT INFORMATION
2
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