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TEA1110AG-S14-T View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
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TEA1110AG-S14-T Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
TEA1110A
LINEAR INTEGRATED CIRCUIT
„ ELECTRIC CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
CONDITIONS
MIN
Receiving amplifier (pins IR, QR and GAR)
Voltage gain from IR to QR
GVRX VIR = 4mV (RMS)
32
Gain variation with frequency referred to
1kHz
GVRX(F) f = 300~3400 Hz
Gain variation with temperature referred
to 25°C
GVRX(T) Ta = -25 ~ +75 °C
Gain voltage reduction range
external resistor connected between
GVRXR GAR and QR
Maximum receiving signal
(RMS value)
Noise output voltage at pin R
(RMS value)
Automatic gain control (pin AGC)
IP =0mA sine wave drive
VO(rms)
RL = 50, THD =2%
IP = 0mA sine wave drive
RL =450 , THD =2%
VNORX(rms)
GVRX =33dB,
RL =150
IR
open-circuit,
Gain control range for microphone and
receiving amplifiers with respect to
ILINE=15mA
Highest line current for maximum gain
Lowest line current for minimum gain
DTMF amplifier (pin DTMF)
GVTRX ILINE = 85mA
ISTART
ISTOP
Voltage gain from DTMF to LN
GVDTMF
VDTMF = 20mV (RMS)
MUTE = LOW
24.1
Gain variation with frequency referred to
1kHz
GVDTMF(F) f = 300~3400Hz
Gain variation with temperature referred
to25°C
GVDTMF(T) Ta = -25 ~ +75 °C
Voltage gain from DTMF to QR
(confidence tone)
Mute function (pin MUTE)
GVCT
VDTMF = 20mV (RMS)
RL = 150
LOW level input voltage
VIL
VEE
-0.4
HIGH level input voltage
VIH
VEE
+1.5
Input current
IMUTE
Gain reduction for microphone and
receiving amplifiers
GVTRXM MUTE = LOW
TYP
33
±0.2
±0.3
0.25
0.35
-87
5.9
23
56
25.3
±0.2
±0.4
-15
1.5
80
MAX UNIT
34 dB
dB
dB
14 dB
V
dBVp
dB
mA
mA
26.5 dB
dB
dB
dB
VEE
V
+0.3
VCC
V
+0.4
μA
dB
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R108-014.C
 

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