Philips Semiconductors
0.95 V starting power unit
Preliminary specification
TEA1202TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
ILDO
∆VLDO
∆Vline
output current
output voltage accuracy
line voltage regulation
in regulation
VI − VLDO = 1 V;
ILDO = 1 mA; note 10
1 mA < ILDO < 150 mA;
note 11
−
−3.5
∆Vload
load voltage regulation with
changing load current
(VI − VLDO) > Vdrop < 4.5 V −
4.5 V < (VI − VLDO) < 5.5 V −
10 mA < ILDO < 150 mA;
−
note 12
PSRR
power supply ripple rejection note 13
−
tres(up)
response time after a positive IO = 0.5 mA to 50 mA;
−
load step
CL = 2.2 µF;
VO(error) < ±0.1% of end
value
tres(down)
response time after a negative IO = 50 mA to 0.5 mA;
−
load step
CL = 2.2 µF;
VO(error) < ±0.1% of end
value
Iq(LDO)
quiescent current
−
Ishdwn(LDO) shut-down current
−
SWITCH CIRCUIT
RDS(on)(LD01) LD01 drain-to-source
resistance
LD01 in switched-on state; −
Vl(LDO1) = 5 V; VFB1 < 0.4 V
RDS(on)(LD02) LD02 drain-to-source
resistance
LD02 in switched-on state; −
Vl(LDO2) = 5 V; VFB2 < 0.4 V
IO(max)(LDO1) LDO1 maximum output current LDO1 in switched-on state; −
VFB1 > 0.4 V
IO(max)(LDO2) LDO2 maximum output current LDO2 in switched-on state; −
VFB2 > 0.4 V
Low battery detector
tt(HL)
transition time
falling Vbat
−
DETECTION INPUT PIN LBI1
Vdet
Vhys
TCVdet
TCVhys
low battery detection level
falling Vbat
low battery detection hysteresis
temperature coefficient of
detection level
temperature coefficient of
detection hysteresis
0.87
−
−
−
DETECTION OUTPUT PIN LB0
IO(sink)
output sink current
15
TYP.
−
−
−
−
−
40
−
−
50
−
500
300
−
−
2
0.90
20
0
0.175
−
MAX.
250
+3.5
UNIT
mA
%
0.1
0.2
−0.02
%/V
%/V
%/mA
−
dB
20
µs
100
µs
−
µA
1
µA
750
mΩ
450
mΩ
0.40 A
0.40 A
−
µs
0.93 V
−
mV
−
mV/K
−
mV/K
−
µA
2002 Mar 14
13