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TEA1202TS_2 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
TEA1202TS_2
Philips
Philips Electronics Philips
TEA1202TS_2 Datasheet PDF : 28 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Philips Semiconductors
0.95 V starting power unit
Preliminary specification
TEA1202TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
ILDO
VLDO
Vline
output current
output voltage accuracy
line voltage regulation
in regulation
VI VLDO = 1 V;
ILDO = 1 mA; note 10
1 mA < ILDO < 150 mA;
note 11
3.5
Vload
load voltage regulation with
changing load current
(VI VLDO) > Vdrop < 4.5 V
4.5 V < (VI VLDO) < 5.5 V
10 mA < ILDO < 150 mA;
note 12
PSRR
power supply ripple rejection note 13
tres(up)
response time after a positive IO = 0.5 mA to 50 mA;
load step
CL = 2.2 µF;
VO(error) < ±0.1% of end
value
tres(down)
response time after a negative IO = 50 mA to 0.5 mA;
load step
CL = 2.2 µF;
VO(error) < ±0.1% of end
value
Iq(LDO)
quiescent current
Ishdwn(LDO) shut-down current
SWITCH CIRCUIT
RDS(on)(LD01) LD01 drain-to-source
resistance
LD01 in switched-on state;
Vl(LDO1) = 5 V; VFB1 < 0.4 V
RDS(on)(LD02) LD02 drain-to-source
resistance
LD02 in switched-on state;
Vl(LDO2) = 5 V; VFB2 < 0.4 V
IO(max)(LDO1) LDO1 maximum output current LDO1 in switched-on state;
VFB1 > 0.4 V
IO(max)(LDO2) LDO2 maximum output current LDO2 in switched-on state;
VFB2 > 0.4 V
Low battery detector
tt(HL)
transition time
falling Vbat
DETECTION INPUT PIN LBI1
Vdet
Vhys
TCVdet
TCVhys
low battery detection level
falling Vbat
low battery detection hysteresis
temperature coefficient of
detection level
temperature coefficient of
detection hysteresis
0.87
DETECTION OUTPUT PIN LB0
IO(sink)
output sink current
15
TYP.
40
50
500
300
2
0.90
20
0
0.175
MAX.
250
+3.5
UNIT
mA
%
0.1
0.2
0.02
%/V
%/V
%/mA
dB
20
µs
100
µs
µA
1
µA
750
m
450
m
0.40 A
0.40 A
µs
0.93 V
mV
mV/K
mV/K
µA
2002 Mar 14
13
 

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