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TEA1110A View Datasheet(PDF) - Philips Electronics

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Description
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TEA1110A Datasheet PDF : 20 Pages
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Philips Semiconductors
Low voltage versatile telephone
transmission circuit with dialler interface
Product specification
TEA1110A
SYMBOL
PARAMETER
CONDITIONS
Gvrxr
Vo(rms)
gain voltage reduction range
maximum receiving signal (RMS
value)
Vnorx(rms)
noise output voltage at pin QR
(RMS value)
external resistor
connected between
GAR and QR
IP = 0 mA sine wave
drive; RL = 150 ;
THD = 2%
IP = 0 mA sine wave
drive; RL = 450 ;
THD = 2%
Gvrx = 33 dB;
IR open-circuit;
RL = 150 ;
psophometrically
weighted (P53 curve)
Automatic gain control (pin AGC)
Gvtrx
Istart
gain control range for microphone
and receiving amplifiers with respect
to Iline = 15 mA
highest line current for maximum
gain
Iline = 85 mA
Istop
lowest line current for minimum gain
DTMF amplifier (pin DTMF)
Zi
Gvdtmf
input impedance
voltage gain from DTMF to LN
Gvdtmf(f)
Gvdtmf(T)
Gvct
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 °C
voltage gain from DTMF to QR
(confidence tone)
Mute function (pin MUTE)
VDTMF = 20 mV (RMS);
MUTE = LOW
f = 300 to 3400 Hz
Tamb = 25 to +75 °C
VDTMF = 20 mV (RMS);
RL = 150
VIL
VIH
IMUTE
Gvtrxm
LOW level input voltage
HIGH level input voltage
input current
gain reduction for microphone and
receiving amplifiers
MUTE = LOW
MIN.
TYP. MAX.
14
UNIT
dB
0.25
V
0.35
V
87
dBVp
5.9
dB
23
mA
56
mA
20
k
24.1
25.3 26.5
dB
±0.2
dB
±0.4
dB
15
dB
VEE 0.4
VEE + 1.5
1.5
80
VEE + 0.3 V
VCC + 0.4 V
µA
dB
1997 Apr 22
12
 

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