Philips Semiconductors
Low voltage versatile telephone
transmission circuit with dialler interface
Product specification
TEA1110A
SYMBOL
PARAMETER
CONDITIONS
∆Gvrxr
Vo(rms)
gain voltage reduction range
maximum receiving signal (RMS
value)
Vnorx(rms)
noise output voltage at pin QR
(RMS value)
external resistor
connected between
GAR and QR
IP = 0 mA sine wave
drive; RL = 150 Ω;
THD = 2%
IP = 0 mA sine wave
drive; RL = 450 Ω;
THD = 2%
Gvrx = 33 dB;
IR open-circuit;
RL = 150 Ω;
psophometrically
weighted (P53 curve)
Automatic gain control (pin AGC)
∆Gvtrx
Istart
gain control range for microphone
and receiving amplifiers with respect
to Iline = 15 mA
highest line current for maximum
gain
Iline = 85 mA
Istop
lowest line current for minimum gain
DTMF amplifier (pin DTMF)
Zi
Gvdtmf
input impedance
voltage gain from DTMF to LN
∆Gvdtmf(f)
∆Gvdtmf(T)
Gvct
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 °C
voltage gain from DTMF to QR
(confidence tone)
Mute function (pin MUTE)
VDTMF = 20 mV (RMS);
MUTE = LOW
f = 300 to 3400 Hz
Tamb = −25 to +75 °C
VDTMF = 20 mV (RMS);
RL = 150 Ω
VIL
VIH
IMUTE
∆Gvtrxm
LOW level input voltage
HIGH level input voltage
input current
gain reduction for microphone and
receiving amplifiers
MUTE = LOW
MIN.
−
TYP. MAX.
−
14
UNIT
dB
−
0.25 −
V
−
0.35 −
V
−
−87 −
dBVp
−
5.9 −
dB
−
23 −
mA
−
56 −
mA
−
20 −
kΩ
24.1
25.3 26.5
dB
−
±0.2 −
dB
−
±0.4 −
dB
−
−15 −
dB
VEE − 0.4 −
VEE + 1.5 −
1.5
80
VEE + 0.3 V
VCC + 0.4 V
µA
dB
1997 Apr 22
12