Philips Semiconductors
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
Product specification
TEA1114A
SYMBOL
PARAMETER
CONDITIONS
MIN.
Transmit stage (pins MIC+, MIC− and DTMF)
MICROPHONE AMPLIFIER (PINS MIC+ AND MIC−)
Zi
input impedance
differential between
−
pins MIC+ and MIC−
Gv(TX)
single-ended between
pins MIC+/MIC− and VEE
voltage gain from
pins MIC+/MIC− to pin LN
VMIC = 4 mV (RMS)
−
43.2
∆Gv(TX)(f)
voltage gain variation with
f = 300 to 3400 Hz
−
frequency referred to 1 kHz
∆Gv(TX)(T)
voltage gain variation with
Tamb = −25 to +75 °C
−
temperature referred to 25 °C
CMRR
common mode rejection ratio
−
VLN(max)(rms)
Vno(LN)
maximum sending signal
(RMS value)
Iline = 15 mA; THD = 2% 1.8
Iline = 4 mA; THD = 10% −
noise output voltage at pin LN psophometrically
−
weighted (P53 curve);
pins MIC+/ MIC− shorted
through 200 Ω
DTMF AMPLIFIER (PIN DTMF)
Zi
Gv(DTMF)
input impedance
−
voltage gain from pin DTMF to VDTMF = 20 mV (RMS); 25
pin LN
MUTE = LOW
∆Gv(DTMF)(f) voltage gain variation with
f = 300 to 3400 Hz
−
frequency referred to 1 kHz
∆Gv(DTMF)(T) voltage gain variation with
Tamb = −25 to +75 °C
−
temperature referred to 25 °C
Gv(ct)
voltage gain from pin DTMF to VDTMF = 20 mV (RMS); −
pin RX (confidence tone)
RL2 = 10 kΩ;
MUTE = LOW
Receiving stage (pins IR, RX, GAR and QR)
THE RECEIVE AMPLIFIER (PINS IR AND RX)
Zi
Gv(RX)
input impedance
voltage gain from pin IR to
pin RX
∆Gv(RX)(f)
voltage gain variation with
frequency referred to 1 kHz
∆Gv(RX)(T)
voltage gain variation with
temperature referred to 25 °C
VRX(max)(rms) maximum receiving signal on
pin RX (RMS value)
VIR = 4 mV (RMS)
f = 300 to 3400 Hz
Tamb = −25 to +75 °C
IP = 0 mA; sine wave
drive; RL2 = 10 kΩ;
THD = 2%
−
32.4
−
−
0.4
TYP.
68
34
44.2
±0.2
±0.3
80
2.15
0.35
−78
21
26
±0.2
±0.4
−9.2
21.5
33.4
±0.2
±0.3
−
MAX. UNIT
−
kΩ
−
kΩ
45.2
dB
−
dB
−
dB
−
dB
−
V
−
V
−
dBmp
−
kΩ
27
dB
−
dB
−
dB
−
dB
−
kΩ
34.4
dB
−
dB
−
dB
−
V
2000 Mar 21
16