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TEA1114A/C1 View Datasheet(PDF) - Philips Electronics

Part Name
Description
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TEA1114A/C1 Datasheet PDF : 28 Pages
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Philips Semiconductors
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
Product specification
TEA1114A
SYMBOL
PARAMETER
CONDITIONS
MIN.
Transmit stage (pins MIC+, MICand DTMF)
MICROPHONE AMPLIFIER (PINS MIC+ AND MIC)
Zi
input impedance
differential between
pins MIC+ and MIC
Gv(TX)
single-ended between
pins MIC+/MICand VEE
voltage gain from
pins MIC+/MICto pin LN
VMIC = 4 mV (RMS)
43.2
Gv(TX)(f)
voltage gain variation with
f = 300 to 3400 Hz
frequency referred to 1 kHz
Gv(TX)(T)
voltage gain variation with
Tamb = 25 to +75 °C
temperature referred to 25 °C
CMRR
common mode rejection ratio
VLN(max)(rms)
Vno(LN)
maximum sending signal
(RMS value)
Iline = 15 mA; THD = 2% 1.8
Iline = 4 mA; THD = 10%
noise output voltage at pin LN psophometrically
weighted (P53 curve);
pins MIC+/ MICshorted
through 200
DTMF AMPLIFIER (PIN DTMF)
Zi
Gv(DTMF)
input impedance
voltage gain from pin DTMF to VDTMF = 20 mV (RMS); 25
pin LN
MUTE = LOW
Gv(DTMF)(f) voltage gain variation with
f = 300 to 3400 Hz
frequency referred to 1 kHz
Gv(DTMF)(T) voltage gain variation with
Tamb = 25 to +75 °C
temperature referred to 25 °C
Gv(ct)
voltage gain from pin DTMF to VDTMF = 20 mV (RMS);
pin RX (confidence tone)
RL2 = 10 k;
MUTE = LOW
Receiving stage (pins IR, RX, GAR and QR)
THE RECEIVE AMPLIFIER (PINS IR AND RX)
Zi
Gv(RX)
input impedance
voltage gain from pin IR to
pin RX
Gv(RX)(f)
voltage gain variation with
frequency referred to 1 kHz
Gv(RX)(T)
voltage gain variation with
temperature referred to 25 °C
VRX(max)(rms) maximum receiving signal on
pin RX (RMS value)
VIR = 4 mV (RMS)
f = 300 to 3400 Hz
Tamb = 25 to +75 °C
IP = 0 mA; sine wave
drive; RL2 = 10 k;
THD = 2%
32.4
0.4
TYP.
68
34
44.2
±0.2
±0.3
80
2.15
0.35
78
21
26
±0.2
±0.4
9.2
21.5
33.4
±0.2
±0.3
MAX. UNIT
k
k
45.2
dB
dB
dB
dB
V
V
dBmp
k
27
dB
dB
dB
dB
k
34.4
dB
dB
dB
V
2000 Mar 21
16
 

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