TEA1112AT/C1 View Datasheet(PDF) - Philips Electronics

Part Name

Description

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TEA1112AT/C1

Low voltage versatile telephone transmission circuits with dialler interface

Philips Electronics 

Philips Semiconductors

Low voltage versatile telephone

transmission circuits with dialler interface

Product specification

TEA1112; TEA1112A

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Microphone mute (pins MMUTE; TEA1112 and MMUTE; TEA1112A)

∆Gvtxm

gain reduction in microphone MUTE

mode

−

80

VIL

VIH

IMMUTE

LOW level input voltage

HIGH level input voltage

input current

input level = HIGH

VEE − 0.4 −

VEE + 1.5 −

−

1.25

Receiving amplifier (pins IR, QR and GAR)

Zi

Gvrx

∆Gvrx(f)

input impedance

voltage gain from IR to QR

gain variation with frequency

referred to 1 kHz

VIR = 6 mV (RMS)

f = 300 to 3400 Hz

−

20

29.7

31.2

−

±0.2

∆Gvrx(T) gain variation with temperature

Tamb = −25 to +75 °C

−

referred to 25 °C

±0.3

∆Gvrxr

gain voltage reduction range

external resistor

−

−

connected between

GAR and QR

Vo(rms)

Vnorx(rms)

maximum receiving signal (RMS

value)

Ip = 0 mA sine wave drive; −

RL = 150 Ω; THD = 2%

Ip = 0 mA sine wave drive; −

RL = 450 Ω; THD = 2%

noise output voltage at pin QR (RMS IR open-circuit;

−

value)

RL = 150 Ω;

psophometrically weighted

(P53 curve)

0.25

0.35

−86

−

dB

VEE + 0.3 V

VCC + 0.4 V

3

µA

−

kΩ

32.7

dB

−

dB

−

dB

12

dB

−

V

−

V

−

dBVp

Automatic gain control (pin AGC)

∆Gvtrx

Istart

gain control range for microphone

and receiving amplifiers with

Iline = 85 mA

respect to Iline = 15 mA

highest line current for maximum gain

−

5.8 −

dB

−

26

−

mA

1997 Mar 26

13

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