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TEA1095 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
TEA1095
Philips
Philips Electronics Philips
TEA1095 Datasheet PDF : 28 Pages
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Philips Semiconductors
Voice switched speakerphone IC
Product specification
TEA1095
SYMBOL
PARAMETER
CONDITIONS
MIN.
Gvrxm
gain reduction with MUTERX
MUTERX = HIGH
active
Envelope and noise detectors (TSEN, TENV, TNOI, RSEN, RENV and RNOI)
PREAMPLIFIERS
Gv(TSEN) voltage gain from TXIN to TSEN
Gv(RSEN) voltage gain between RXIN to
RSEN
LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
ϕdet(TSEN) sensitivity detection on pin TSEN; ITSEN = 0.8 to 160 µA
voltage change on pin TENV
when doubling the current from
TSEN
ϕdet(RSEN) sensitivity detection on pin RSEN; IRSEN = 0.8 to 160 µA
voltage change on pin RENV
when doubling the current from
RSEN
SIGNAL ENVELOPE DETECTORS
Isource(ENV) maximum current sourced from
pin TENV or RENV
Isink(ENV)
VENV
maximum current sunk by
pin TENV or RENV
voltage difference between
pins RENV and TENV
0.75
when 10 µA is sourced
from both RSEN and
TSEN; envelope detectors
tracking; note 1
NOISE ENVELOPE DETECTORS
Isource(NOI)
Isink(NOI)
VNOI
maximum current sourced from
pins TNOI or RNOI
maximum current sunk by
pins TNOI or RNOI
voltage difference between
pins RNOI and TNOI
when 2 µA is sourced
from both RSEN and
TSEN; noise detectors
tracking; note 1
0.75
DIAL TONE DETECTOR
VRINDT(rms) threshold level at pin RXIN
(RMS value)
TYP. MAX.
80
UNIT
dB
40
dB
0
dB
18
mV
18
mV
120
µA
1
1.25
µA
±3
mV
1
1.25
µA
120
µA
±3
mV
42
mV
1997 Nov 25
15
 

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