Philips Semiconductors
Voice switched speakerphone IC
Product specification
TEA1095
SYMBOL
PARAMETER
CONDITIONS
MIN.
∆Gvrxm
gain reduction with MUTERX
MUTERX = HIGH
−
active
Envelope and noise detectors (TSEN, TENV, TNOI, RSEN, RENV and RNOI)
PREAMPLIFIERS
Gv(TSEN) voltage gain from TXIN to TSEN
−
Gv(RSEN) voltage gain between RXIN to
−
RSEN
LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
ϕdet(TSEN) sensitivity detection on pin TSEN; ITSEN = 0.8 to 160 µA
−
voltage change on pin TENV
when doubling the current from
TSEN
ϕdet(RSEN) sensitivity detection on pin RSEN; IRSEN = 0.8 to 160 µA
−
voltage change on pin RENV
when doubling the current from
RSEN
SIGNAL ENVELOPE DETECTORS
Isource(ENV) maximum current sourced from
pin TENV or RENV
Isink(ENV)
∆VENV
maximum current sunk by
pin TENV or RENV
voltage difference between
pins RENV and TENV
−
0.75
when 10 µA is sourced
−
from both RSEN and
TSEN; envelope detectors
tracking; note 1
NOISE ENVELOPE DETECTORS
Isource(NOI)
Isink(NOI)
∆VNOI
maximum current sourced from
pins TNOI or RNOI
maximum current sunk by
pins TNOI or RNOI
voltage difference between
pins RNOI and TNOI
when 2 µA is sourced
from both RSEN and
TSEN; noise detectors
tracking; note 1
0.75
−
−
DIAL TONE DETECTOR
VRINDT(rms) threshold level at pin RXIN
−
(RMS value)
TYP. MAX.
80 −
UNIT
dB
40 −
dB
0
−
dB
18 −
mV
18 −
mV
120 −
µA
1
1.25
µA
±3 −
mV
1
1.25
µA
120 −
µA
±3 −
mV
42 −
mV
1997 Nov 25
15